[1] Gurnee M N, Kohin M, Blackwell R, et al. Developments in uncooled IR technology at BAE systems [C]. Proc. SPIE, 2001, 4369: 287-296. 
[2] Lawson W D, Nielson S, Putley E H, et al. Preparation and properties of HgTe and mixed crysals of HgTe-CdTe [J]. J. Phys. Chem. Solids, 1959, 9(3-4): 325-329. 
[3] Rogalski A. Infrared detectors: status and trends [J]. Prog. Quantum Electron., 2003, 27(2-3): 59-210. 
[4] Chen Jishu, Hu Xierong, Xu Pingmao. Infrared Detector [M]. Beijing: National Defense Industry Press, 1986: 1-3(in Chinese). 
陈继述, 胡燮荣, 徐平茂. 红外探测器 [M]. 北京: 国防工业出版社, 1986: 1-3. 
[5] FLIR Inc. Uncooled detectors for thermal imaging cameras [DB/OL]. http://www.flir.com/uploadedFiles/Eurasia/Cores_and_Components/Technical_Notes/uncooled%20detectors%20BST.pdf. 
[6] Tissot J L, Tinnes S, Durand A, et al. High-performance uncooled amorphous silicon video graphics array and extended graphics array infrared focal plane arrays with 17-μm pixel pitch [J]. Opt. Eng., 2011, 50(6): 061006-061006-7. 
[7] Trouilleau C, Fièque B, Noblet S, et al. High-performance uncooled amorphous silicon TEC less XGA IRFPA with 17μm pixel-pitch [C]. Proc. SPIE, 2009, 7298: 72980Q-72980Q-6. 
[8] Li C, Han C J, Skidmore G D, et al. DRS uncooled VOx infrared detector development and production status [C]. Proc. SPIE, 2010, 7660: 76600V-76600V-9. 
[9] Xu Qingqing, Chen Jianxin, Zhou Yi, et al. Mid-wavelength infrared InAs/GaSb type Ⅱ superlattice detectors [J]. Infrared and Laser Engineering, 2012, 41(1): 7-9(in Chinese). 
徐庆庆, 陈建新, 周易, 等. InAs/GaSbⅡ类超晶格中波红外探测器 [J]. 红外与激光工程, 2012, 41(1): 7-9. 
[10] Rogalski A. Infrared detectors：status and trends [J]. Prog. Quantum Electron., 2004, 27(4): 59-210. 
[11] Emelie P Y, Phillips J D, Velicu S, et al. Parameter extraction of HgCdTe infrared photodiodes exhibiting Auger suppression [J]. J. Phys. D: Appl. Phys., 2009, 42(23): 234003.1-234003.8. 
[12] Shi Yanli, Li Fan, Zhao Lusheng, et al. Photoelectric properties of InAs/GaSb type-Ⅱ superlattices [J]. Infrared and Laser Engineering, 2011, 40(6): 981-985(in Chinese). 
史衍丽, 李凡, 赵鲁生, 等. InAs/GaSbⅡ类超晶格红外探测器光电特性理论计算 [J]. 红外与激光工程, 2011, 40(6): 981-985. 
[13] Rogalski A. Infrared Detectors [M]. 2nd edition. FL, USA: CRC Press, 2010. 
[14] Rogalski A, Antoszewski J, Faraone L. Third—generation infrared photodetector arrays [J]. J. Appl. Phys., 2009, 105(9): 091101-1-091101-44. 
[15] Hipwood L G, Baker I M, Jones C L. LW IRFPAs made from HgCdTe grown by MOVPE for use in Multispectral Imaging [C]. Proc. SPIE, 2008, 6940: 69400G.1-69400G.8. 
[16] Kinch M A, Beck J D, Wan C F, et al. HgCdTe electron avalanche photodiodes [J]. J. Electron. Mater., 2004, 33(6): 630-639. 
[17] Leveque G, Nasser M, Bertho D, et al. Ionization energies in CdxHg1-xTe avalanche photodiodes [J]. Semicon. Sci. Technol., 1993, 8(7):1317-1323. 
[18] de Borniola E, Guellec F, Rothman J. Recent progress in infrared detector technologies [C]. Proc. SPIE, 2010, 7660: 76603D-1-9. 
[19] Sundaram M, Reisinger A, Dennis R, et al. Status of quantum well infrared photodetector technology at QmagiQ today [J]. Infrared Phys. Technol., 2010, 54(3): 194-198. 
[20] Serna M A, McCauley D W. Generalizing a quantum-well infrared single-pixel polarimeter (QWISPP) to Fourier transform spectral-polarimetric imaging [C]. Proc. SPIE, 2004, 5167: 175-185. 
[21] Gunapala S D, Bandara S V, Liu J K, et al. Development of mid-wavelength and long-wavelength megapixel portable QWIP imaging cameras [J]. Infrared Physics, 2005, 47(1-2): 67-75. 
[22] Eker S U, Kaldirim M, Arslan Y, et al. Large-format voltage-tunable dual-band quantum-well infrared photodetector focal plane array for third-generation thermal imagers [J]. Infrared Phys. Technol., 2009, 52: 385-390. 
[23] Ting D Z, Hill C J, Soibel A, et al. Gain and noise of high-performance long wavelength superlattice infrared detectors[C]. Proc. SPIE, 2010, 7660: 76601R-1-12. 
[24] Mailhiot C, Smith D L, Vac J, et al. Proposal for strained type II superlattice infrared detectors [J]. Sci. Technol., 1989, A7: 445-449. 
[25] Hoffman C A, Meyer J R, Youngdale E R, et al. Electron transport in InAs/Ga1-xInxSb superlattices [J]. Solid State Electron., 1994, 37: 1203-1206. 
[26] Grein C H, Young P M, Ehrenreich H. Minority carrier lifetimes in ideal InGaSb/InAs superlattices [J]. Appl. Phys. Lett., 1992, 61(24): 2905-2907. 
[27] Razeghi M, Hoffman D, Nguyen B M, et al. Recent advances in LWIR Type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the center for quantum devices [C]. Proc. IEEE, 2009, 97(6):1056-1066. 
[28] Her T H, Finlay R J, Wu C, et al. Femtosecond laser-induced formation of spikes on silicon [J]. Applied Physics A, 2000, 70(4): 383-385. 
[29] Sheehy M A. Femtosecond-Laser Microstructuring of Silicon: Dopants and Defects [D]. Boston: Doctorial Dissertation of Harvard University, 2004, 65-10: 5168
[30] Huang Z H, Carey J E, Liu M, et al. Microstructured silicon photodetector [J]. Appl. Phys. Lett., 2006, 89(3): 033506.1-033506.3. 
[31] Su Yuanjie, Jiang Yadong, Wu Zhiming, et al. Influence of barrier layer on photoelectric properties of black silicon photodetectors [J]. Journal of Optoelectronics·Laser, 2011, (10): 1399-1442(in Chinese). 
苏元捷, 蒋亚东, 吴志明, 等. 势垒层对黑硅光电探测器性能影响的研究 [J]. 光电子·激光, 2011, (10): 1399-1442. 
[32] Xia Yan, Xue Chenyang, Ou Wen, et al. Thermopile infrared detector based on black silicon as absorption [J]. Instrument Technique and Sensor, 2012, (3): 11-14(in Chinese). 
夏燕, 薛晨阳, 欧文, 等. 基于黑硅为吸收层的热电堆红外探测器[J]. 仪表技术与传感器. 2012, (3): 11-14. 
[33] Yuan Jun, Tai Yunjian, Li Long, et al. Preparation of VOx films for uncooled infrared detectors [J]. Infrared Technology [J]. 2009, 31(6): 334-337(in Chinese). 
袁俊, 太云见, 李龙, 等. 适用于非制冷焦平面探测器的氧化钒薄膜制备研究 [J]. 红外技术, 2009, 31(6): 334-337. 
[34] Yuan Jun, Tai Yunjian, Lei Xiaohong, et al. Research on fabrication of VOx UFPA detectors [J]. Infrared Technology, 2009, 31(1): 1-4(in Chinese). 
袁俊, 太云见, 雷晓虹, 等. 氧化钒非制冷红外焦平面探测器芯片工艺研究 [J]. 红外技术, 2009, 31(1): 1-4. 
[35] Shanghai Institute of Technical Physics of the Chinese Academy of Sciences. Mercury cadmium telluride Infrared detector [OL]. http://www.tephys.com.cn/shownews.asp?newsid=1724(in Chinese). 
中科院上海技术物理研究所组件室. 碲镉汞红外探测器[OL]. http://www.tephys.com.cn/shownews.asp?newsid=1724. 
[36] Shi Yanli. 320×256 GaAs/AlGaAs quantum well infrared photodetector [J]. Infrared and Laser Engineering, 2008, 37(1): 42-44(in Chinese). 
史衍丽. 320×256 GaAs/AlGaAs量子阱红外探测器 [J]. 红外与激光工程, 2008, 37(1): 42-44. 
[37] Wang Ke, Zheng Wanhua, Ren gang, et al. Design and optimization of photonic crystal coupling layer for bi-color quantum well infrared photodetectors [J]. Acta Physica Sinica, 2008, 57(3): 1730-1735(in Chinese). 
王科, 郑婉华, 任刚, 等. 双色量子阱红外探测器顶部光子晶体耦合层的设计优化 [J]. 物理学报, 2008, 57(3): 1730-1735. 
[38] Qi Lifang, Li Xianjie, Zhao Yonglin, et al. Development of a long wavelength two-color AlxGa1- xAs/ GaAs quantum well infrared photo-detector [J]. Nanoelectronic Device & Technology, 2009, 46(7): 396-399(in Chinese). 
齐利芳, 李献杰, 赵永林, 等. 长波双色AlxGa1-xAs/GaAs量子阱红外探测器的研制 [J]. 纳米器件与技术, 2009, 46(7): 396-399. 
[39] Liu Xiaoyu, Ma Wenquan, Zhang Yanhua, et al. Two-color quantum well infrared photodetector simultaneously working at 10-14 μm [J]. Acta Physica Sinica, 2010, 59(8): 5720-5723(in Chinese). 
刘小宇, 马文全, 张艳华. 10-14 μm同时响应的双色量子阱红外探测器 [J]. 物理学报, 2010, 59(8): 5720-5723. 
[40] Sun Lu, Zhao Huiyuan, Su Binghua. Design of GaN-based quantum well infrared detector [J]. Modern Electronics Technique, 2011, 34(10): 208-210(in Chinese). 
孙鲁, 赵慧元, 苏秉华. GaN基量子阱红外探测器的设计 [J]. 现代电子技术, 2011, 34(10): 
[41]Zeng Gehong, Shi Yanli, Zhuang Jisheng. Principles, status and prospect of type Ⅱ superlattice infrared detectors [J]. Infrared Technology, 2011, 34(6): 208-210(in Chinese). 
曾戈虹, 史衍丽, 庄继胜. Ⅱ类超晶格红外探测器的机理、现状与前景 [J]. 红外技术, 2011, 34(6): 208-210. 
[42] Terterian S, Nosho B, Sharifi H, et al. Fabrication and performance of InAs/GaSb-based superlattice LWIR detectors [C]. Proc. SPIE, 2010, 7660: 76601O-76601O-8.